DMS2095LFDB document number: ds35955 rev. 3 - 2 1 of 7 www.diodes.com april 2014 ? diodes incorporated DMS2095LFDB new product p-channel enhancem ent mode mosfet with integrated schottky diode product summary mosfet v (br)dss r ds(on) max i d -20v 95m @ v gs = -4.5v -3.4a 120m @ v gs = -2.5v -3.0a 150m @ v gs = -1.8v -2.7a schottky diode v r v f max i o 20v 400mv @ i f = 0.5a 1.0a 470mv @ i f = 1.0a features and benefits ? mosfet with low r ds(on) ? minimize conduction losses ? low gate threshold voltage, -1.3v max ? schottky diode with low forward voltage drop ? low profile, 0.5mm max height ? totally lead-free & fully rohs compliant (notes 1 & 2) ? halogen and antimony free. ?green? device (note 3) ? qualified to aec-q101 standards for high reliability mechanical data ? case: u-dfn2020-6 type b ? case material: molded plastic, ?green? molding compound. ul flammability classification rating 94v-0 ? moisture sensitivity: level 1 per j-std-020 ? terminal connections: see diagram ? terminals: finish ? nipdau annealed over copper leadframe. solderable per mil-std-202, method 208 ? weight: 0.0065 grams (approximate) description and applications this new generation mosfet has been designed to minimize the on- state resistance (r ds(on) ) and yet maintain superior switching performance, making it ideal fo r high efficiency power management applications. ? power management functions ordering information (note 4) part number case packaging DMS2095LFDB-7 u-dfn2020-6 type b 3,000/tape & reel DMS2095LFDB-13 u-dfn2020-6 type b 10,000/tape & reel notes: 1. no purposely added lead. fully eu directiv e 2002/95/ec (rohs) & 2011/6 5/eu (rohs 2) compliant. 2. see http://www.diodes.com/quality/lead_free.html for more in formation about diodes incorporated?s definitions of halogen- a nd antimony-free, "green" and lead-free. 3. halogen- and antimony-free "green? products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total br + cl) and <1000ppm antimony compounds. 4. for packaging details, go to our websit e at http://www.diodes.com /products/packages.html. marking information date code key year 2011 2012 2013 2014 2015 2016 2017 code y z a b c d e month jan feb mar apr may jun jul aug sep oct nov dec code 1 2 3 4 5 6 7 8 9 o n d u-dfn2020-6 type b q1 p-mosfet bottom view ms2 = product type marking code ym = date code marking y = year (ex: v = 2008) m = month (ex: 9 = september) e4 ms2 ym a nc d s g k d pin1 k d s g d1 schottky diode a k
DMS2095LFDB document number: ds35955 rev. 3 - 2 2 of 7 www.diodes.com april 2014 ? diodes incorporated DMS2095LFDB new product maximum ratings ? p-cha nnel mosfet ? q1 (@t a = +25c, unless otherwise specified.) characteristic symbol value units drain-source voltage v dss -20 v gate-source voltage (note 5) v gss 12 v continuous drain current (note 7) v gs = -4.5v steady state t a = +25c t a = +70c i d -3.4 -2.7 a t<10s t a = +25c t a = +70c i d -3.9 -3.1 a maximum body diode forward current (note 7) i s -1 a pulsed drain current (10 s pulse, duty cycle = 1%) i dm -10 a maximum ratings ? schottky ? d1 (@t a = +25c, unless otherwise specified.) characteristic symbol value unit peak repetitive reverse voltage working peak reverse voltage dc blocking voltage v rrm v rwm v r 20 v average rectified output current (note 7, t<10s) i o 1 a peak repetitive forward current (note 7, t<10s) i frm 2 a non-repetitive peak forward surge current (note 7, t<10s) single half sine-wave superimposed on rated load i fsm 20 a thermal characteristics (@t a = +25c, unless otherwise specified.) characteristic symbol value units total power dissipation (note 6) t a = +25c p d 0.81 w t a = +70c 0.52 thermal resistance, junction to ambient (note 6) steady state r ja 154 c/w t<10s 114 total power dissipation (note 7) t a = +25c p d 1.64 w t a = +70c 1.04 thermal resistance, junction to ambient (note 7) steady state r ja 77 c/w t<10s 57 thermal resistance, junction to case (note 7) r jc 27.5 c/w operating and storage temperature range t j, t stg -55 to +150 c notes: 5. aec-q101 v gs maximum is 9.6v 6. device mounted on fr-4 substrate pc board, 2oz copper, with minimum recommended pad layout. 7. device mounted on fr-4 substrate pc board, 2oz copper, with 1inch square copper plate.
DMS2095LFDB document number: ds35955 rev. 3 - 2 3 of 7 www.diodes.com april 2014 ? diodes incorporated DMS2095LFDB new product electrical characteristics ? p-channel mosfet ? q1 (@t a = +25c, unless otherwise specified.) characteristic symbol min typ max unit test condition off characteristics (note 8) drain-source breakdown voltage bv dss -20 ? ? v v gs = 0v, i d = -250 a zero gate voltage drain current i dss ? ? -1 a v ds = -20v, v gs = 0v gate-source leakage i gss ? ? 800 na v gs = 12v, v ds = 0v on characteristics (note 8) gate threshold voltage v gs(th) -0.4 ? -1.3 v v ds = v gs , i d = -250 a static drain-source on-resistance r ds (on) ? ? ? 48 65 90 95 120 150 m v gs = -4.5v, i d = -2.8a v gs = -2.5v, i d = -2.0a v gs = -1.8v, i d = -1.0a diode forward voltage v sd ? -0.42 -1.2 v v gs = 0v, i s = -1.0a dynamic characteristics (note 9) input capacitance c iss ? 561 ? pf v ds = -10v, v gs = 0v f = 1.0mhz output capacitance c oss ? 78 ? pf reverse transfer capacitance c rss ? 66 ? pf gate resistance r g ? 59.5 ? ? v ds = 0v, v gs = 0v, f = 1mhz total gate charge q g ? 7.0 ? nc v gs = -4.5v, v ds = -10v, i d = -2.5a gate-source charge q gs ? 0.9 ? nc gate-drain charge q gd ? 1.7 ? nc turn-on delay time t d(on) ? 5.3 ? ns v dd = -10v, v gs = -4.5v, r l = 4 ? , r g = 6 ? turn-on rise time t r ? 5.8 ? ns turn-off delay time t d(off) ? 69 ? ns turn-off fall time t f ? 54 ? ns reverse recovery time t rr ? 12.4 ? ns i f = -2.5a, di/dt = 100a/ s reverse recovery charge q rr ? 3.7 ? nc electrical characteristi cs ? schottky ? d1 (@t a = +25c, unless otherwise specified.) characteristic symbol min typ max unit test condition reverse breakdown voltage (note 8) v (br)r 20 35 ? v i r = 1ma forward voltage (note 8) v f ? ? ? ? 0.40 0.47 v i f = 0.5a i f = 1.0a reverse current (note 8) i r ? 30 80 a v r = 20v notes: 8. short duration pulse test used to minimize self-heating effect. 9. guaranteed by design. no t subject to product testing
DMS2095LFDB document number: ds35955 rev. 3 - 2 4 of 7 www.diodes.com april 2014 ? diodes incorporated DMS2095LFDB new product mosfet characteristics v , drain -source voltage (v) figure 1 typical output characteristics ds i, d r a in c u r r e nt ( a ) d 0.0 2.0 4.0 6.0 8.0 10.0 0 0.5 1 1.5 2 2.5 3 v= -1.0v gs v= -1.2v gs v= -1.5v gs v= -3.0v gs v= -4.5v gs v= -2.0v gs v= -4.0v gs v= -2.5v gs v , gate-source voltage (v) gs figure 2 typical transfer characteristics i, d r ai n c u r r e n t (a) d 0 1 2 3 4 5 6 7 8 9 10 0 0.5 1 1.5 2 2.5 3 t = 150c a t = 125c a t = 85c a t = 25c a t = -55c a v = -5.0v ds i , drain source current (a) figure 3 typical on-resistance vs. drain current and gate voltage d r , d r ain-s o u r ce o n- r esistance ( ) ds(on) 0 0.02 0.04 0.06 0.08 0.1 0.12 0.14 0.16 0.18 0.2 12345678910 v = -1.8v gs v = -4.5v gs v = -2.5v gs i , drain source current (a) figure 4 typical on-resistance vs. drain current and temperature d r , d r ain-s o u r ce o n- r esistance ( ) ds(on) 0 0.01 0.02 0.03 0.04 0.05 0.06 0.07 0.08 0.09 0.1 012345678910 t = -55c a t = 25c a t = 85c a t = 125c a t = 150c a v = -4.5v gs t, junction temperature (c) j figure 5 on-resistance variation with temperature r , d r ai n - s o u r c e on-resistance (normalized) ds(on) 0.4 0.8 1.2 1.6 -50 -25 0 25 50 75 100 125 150 v = -2.5v i = -1a gs d v = -4.5v i = -3a gs d t , junction temperature ( c) j figure 6 on-resistance variation with temperature r , d r a in- s o u r c e o n- r e s i s t a n c e () ds(on) 0 0.02 0.04 0.06 0.08 0.1 0.12 -50 -25 0 25 50 75 100 125 150 v = -4.5v i= a gs d -3 v= v i= a gs d -2.5 -1
DMS2095LFDB document number: ds35955 rev. 3 - 2 5 of 7 www.diodes.com april 2014 ? diodes incorporated DMS2095LFDB new product mosfet characteristics (cont.) t , ambient temperature (c) figure 7 gate threshold variation vs. ambient temperature a v, g a te th r esh o ld v o lt a g e (v) gs(th) 0 0.2 0.4 0.6 0.8 1 -50 -25 0 25 50 75 100 125 150 -i = 1ma d -i = 250a d v , source-drain voltage (v) figure 8 diode forward voltage vs. current sd i, so u r c e c u r r e n t (a) s 0 1 2 3 4 5 6 7 8 9 10 0 0.3 0.6 0.9 1.2 1.5 t= 85c a t= 125c a t= 150c a t= -55c a t= 25c a c , junction capacitance (pf) t v , drain-source voltage (v) figure 9 typical junction capacitance ds 10 100 1000 10000 0 2 4 6 8 101214 161820 f = 1mhz c oss c rss c iss q , total gate charge (nc) figure 10 gate-charge characteristics g v, g a t e - s o u r c e v o l t a g e (v) gs 0 1 2 3 4 5 6 7 8 9 10 0 3 6 9 12 15 v = -10v i= -2.5a ds d t1, pulse duration times (sec) figure 11 transient thermal resistance r(t), t r an s i e nt t h e r m al r e s i s tan c e d = 0.7 d = 0.9 d = 0.5 d = 0.3 d = 0.1 d = 0.05 d = 0.02 d = 0.01 d = 0.005 single pulse r (t) = r(t) * r r = 155c/w duty cycle, d = t1/ t2 ? ja ja ja 0.001 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
DMS2095LFDB document number: ds35955 rev. 3 - 2 6 of 7 www.diodes.com april 2014 ? diodes incorporated DMS2095LFDB new product schottky characteristics package outline dimensions please see ap02002 at http://www.diodes.com /datasheets/ap02002.pdf for latest version. suggested pad layout please see ap02001 at http://www.diodes.com/dat asheets/ap02001.pdf for the latest version. v , instantaneous forward voltage (mv) f figure 12 typical forward characteristics i , ins t an t ane o u s f o r wa r d c u r r en t (a) f 0.01 0.1 1 10 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 t = 25c a t = 85c a t = 125c a t = 150c a t = -55c a i , ins t an t ane o u s r eve r se c u r r en t (a) r v , instantaneous reverse voltage (v) r figure 13 typical reverse characteristics 0.1 1 10 100 1000 10000 100000 0 2 4 6 8 10 12 14 16 18 20 t = 25c a t = 85c a t = 125c a t = 150c a t = -55c a u-dfn2020-6 type b dim min max typ a 0.545 0.605 0.575 a1 0 0.05 0.02 a3 ? ? 0.13 b 0.20 0.30 0.25 d 1.95 2.075 2.00 d ? ? 0.45 d2 0.50 0.70 0.60 e ? ? 0.65 e 1.95 2.075 2.00 e2 0.90 1.10 1.00 f ? ? 0.15 l 0.25 0.35 0.30 z ? ? 0.225 all dimensions in mm dimensions value (in mm) z 1.67 g 0.20 g1 0.40 x1 1.0 x2 0.45 y 0.37 y1 0.70 c 0.65 seating plane d e pin#1 id l b d2 e2 e a1 a a3 f z f d g g y c z y1 x2 x1 g1
DMS2095LFDB document number: ds35955 rev. 3 - 2 7 of 7 www.diodes.com april 2014 ? diodes incorporated DMS2095LFDB new product important notice diodes incorporated makes no warranty of any kind, express or implied, with regards to this document, including, but not limited to, the implied warranties of merchantability and fitness for a particular purpose (and their equivalents under the laws of any jurisdiction). diodes incorporated and its subsidiaries rese rve the right to make modifications, enhanc ements, improvements, corrections or ot her changes without further notice to this document and any product descri bed herein. diodes incorporated does not assume any liability ari sing out of the application or use of this document or any product described herein; neither does diodes incorporated convey any license under its patent or trademark rights, nor the rights of others. any customer or user of this document or products described herein in such applica tions shall assume all risks of such use and will agree to hold diodes incorporated and all the companies whose products are represented on diodes incorporated website, harmless against all damages. diodes incorporated does not warrant or accept any liability w hatsoever in respect of any products purchased through unauthoriz ed sales channel. should customers purchase or use diodes inco rporated products for any unintended or una uthorized application, customers shall i ndemnify and hold diodes incorporated and its representativ es harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death a ssociated with such unintended or unauthorized application. products described herein may be covered by one or more united states, international or foreign patents pending. product names and markings noted herein may also be covered by one or more united states, international or foreign trademarks. this document is written in english but may be translated into multiple languages for reference. only the english version of t his document is the final and determinative format released by diodes incorporated. life support diodes incorporated products are specifically not authorized for use as critical com ponents in life support devices or systems without the express written approval of the chief executive offi cer of diodes incorporated. as used herein: a. life support devices or syst ems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when proper ly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. b. a critical component is any component in a life support devic e or system whose failure to perform can be reasonably expect ed to cause the failure of the life support device or to affect its safety or effectiveness. customers represent that they have all necessary expertise in the safety and regulatory ramifi cations of their life support dev ices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-rel ated requirements concerning the ir products and any use of diodes incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or s ystems-related information or support that may be provided by diodes incorporated. further, customers must fully indemnify diodes incorporate d and its representatives against any damages arisi ng out of the use of diodes incorporated pr oducts in such safety-critical, life suppor t devices or systems. copyright ? 2014, diodes incorporated www.diodes.com
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